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New Structure for SiC-MOS Power Devices by Quloud-RSDFT, Introducing a Highly Dense Nitrogen Layer

A paper by Keita Tachiki (now at Kyoto University), Yusuke Nishiya, Junichi Iwata, and Yu-ichiro Matsushita proposing a new structure for SiC-MOS power devices using Quloud-RSDFT has been published in the Japanese Journal of Applied Physics, 62 061005(2023).

In this study, the effect of a highly doped nitrogen layer at the SiC side of the SiC/SiO2 interface on the electronic structure was investigated using first-principles calculations of RSDFT implemented in Quloud. We investigated how the electronic carrier distribution changes when a highly doped nitrogen layer is introduced in a few nm region from the SiC surface. As a result, we theoretically proposed that the performance of SiC-MOS devices can be greatly improved by using a new structure with a highly doped nitrogen layer of 4 nm or more sandwiched between the interfaces.

This calculation was achieved by using the features of Quloud-RSDFT: first-principles electronic structure calculation of giant systems, simulation under electric field, and virtual crystal approximation (VCA) that handles doping.



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