New paper about the World's first Channel Attention for Quantum Convolutional Neural Networks


- Nov 7
Paper in npj Quantum Information: quantum advantage in molecular structure optimization via PITE®.

- Nov 1
PIMD, LAMMPS, and Quantum ESPRESSO integrated into Quloud for enhanced materials computations.

- Oct 19
Taichi Kosugi, PITE®️ developer, will give a talk on imaginary-time evolution and PITE®️ tomorrow.

- Oct 18
Quemix's quantum algorithm PITE®️ is a promising method for preparing Hamiltonian ground states.

- Oct 12
"Skyrmions in van der Waals centrosymmetric materials with Dzyaloshinskii–Moriya interactions"

- Oct 11
New paper "Optimized synthesis for diagonal unitary matrices with reflection symmetry" on arXiv.

- Sep 19
PITE®️ (Probabilistic Imaginary Time Evolution) developed by Quemix has been granted a patent.

- Sep 13
Co-authored with Prof. Hidetoshi Nishimori, a proponent of quantum annealing, published on arXiv.

- Sep 8
New paper : "Adiabatic Ground State Evolution" is posted on arXiv.

- Sep 6
The research result of specific Q-e scheme will be presented at the 72nd Symposium on Macromolecules

- Aug 18
CCP2023 - 34th IUPAP Conference on Computational Physics : Oral & Poster presentations

- Aug 8
Paper on”Quadratic speedups of multi-step probabilistic algorithms in state preparation”on arXiv


- Jul 28
OpenMX (Open Source Software package for the first-principles calculations) has been added to Quloud

- Jul 14
Material simulation leading to the development of energy-saving next-generation power semiconductor

- Jul 7
Paper on Annealing for prediction of grand canonical crystal structures has been published on arXiv

- Jul 4
First-quantized eigensolver for ground and excited states of electrons under a magnetic field

- Jul 3
New Structure for SiC-MOS Power Devices by Quloud-RSDFT, Introducing a Highly Dense Nitrogen Layer

- Jun 20
Calculations on Energy Barrier for Magnetic Flips in Nanoparticles by Quemix product: Quloud-Mag

- Jun 16
Quloud-RSDFT reveals anomalous electron localization phenomena at the interface in SiC power devices

NEWS
