【New Publication】Quantum electrometry in a silicon carbide power device

https://arxiv.org/abs/2603.13836

Quemix researcher Matsushita and collaborators have reported a quantum sensing approach for high-spatial-resolution measurement of electric fields inside silicon carbide (SiC) power devices.

In this study, silicon vacancies (VSi) in SiC are utilized as quantum sensors, enabling sensitive detection of both electric field components parallel and perpendicular to the crystal c-axis. This allows direct measurement of local electric field distributions inside operating devices, which has been challenging with conventional techniques.

Experimental demonstrations on actual SiC power devices show detection of high electric fields up to approximately 2.3 MV/cm, along with high-resolution mapping of their spatial distribution.

This approach is expected to contribute to failure analysis and design optimization of power semiconductor devices.