【Featured in Journal】Origin of shallow hole traps at GaN/SiO₂ interface studied from density functional theory
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Research on the origin of shallow hole traps at the GaN/SiO₂ interface has been published in the American Physical Society journal Physical Review Materials.
In this study, first-principles calculations using realistic GaN/GaOₓ/SiO₂ interface models were performed to investigate shallow hole traps, which remain an important issue for improving the performance of GaN-based MOSFETs. The results show that the amorphous GaOₓ interfacial layer spontaneously formed at the GaN/SiO₂ interface can itself be a major source of hole traps, even in the absence of conventional point defects such as oxygen vacancies.
In particular, holes are localized in tail states derived from the 2p orbitals of low-coordinated oxygen atoms. The resulting elongation of Ga–O bonds raises these electronic states into the GaN band gap, leading to the formation of shallow hole traps.
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